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| Preliminary Preliminary Product Description Stanford Microdevices' SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. SXH-189 5-2000 MHz Medium Power GaAsHBT Amplifier Product Features * Patented High Reliability GaAs HBT Technology * High 3rd Order Intercept : +39 dBm typ. * at 1960 MHz Surface-Mountable Power Plastic Package Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 IP3 IP3 dBm P1dB Gain(dB) P1dB Gain(dB) Applications * PCS, Cellular Systems * High Linearity IF Amplifiers 850 MHz 1960 MHz Symbol P 1dB S 21 S11 IP3 NF Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression Small signal gain Input VSWR Third Order Intercept Point Noise Figure f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz f = 850 MHz f =1960 MHz V s = 8V Rbias = 27 ohms Vdevice 5V Units dB m dB m dB dB dB m dB m dB dB mA C/W Min. Typ. 23.0 23.0 Max. 17.5 19.5 14.0 1.5:1 1.9:1 39.0 39.0 5.0 5.0 Id Rth, j-l Device Current Thermal Resitance (junction - lead) 80 100 108 130 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101247 Rev D 1 Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier 850 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency 25 24 dBm 25 23 25C dB 23 22 21 -40C 85C 21 25C -40C 19 17 15 85C 20 800 825 850 875 MHz 900 925 950 800 825 850 875 MHz 900 925 950 Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 5 0 -5 -10 -15 -20 -25 -30 -35 800 44 S22 42 dBm 40 38 25C 85C dB -40C S11 S12 36 34 800 850 MHz 900 950 825 850 875 MHz 900 925 950 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 25C -40C 85C 42 40 dBm Device Current (mA) 25C -40C 85C 38 36 34 0 3 6 9 12 15 2 4 VS (V) 6 8 10 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101247 Rev D 2 Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier 1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency 25 24 dBm Gain vs. Frequency 20 18 -40C 85C dB 23 22 21 20 1930 25C 16 25C -40C 14 85C 12 10 1940 1950 1960 MHz 1970 1980 1990 1930 1940 1950 1960 MHz 1970 1980 1990 Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 0 -5 S22 43 41 S11 dBm -10 dB -15 -20 -25 25C 39 -40C 85C S12 37 35 1930 -30 -35 1930 1940 1950 1960 MHz 1970 1980 1990 1940 1950 1960 MHz 1970 1980 1990 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 43 Device Current (mA) 41 25C dBm 39 37 35 33 0 3 6 9 -40C 85C 180 160 140 120 100 80 60 40 20 0 0 25C -40C 85C 12 15 2 4 VS (V) 6 8 10 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101247 Rev D 3 850 MHz Application Circuit Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Vs Recommended Bias Resistor Values Supply Voltage(Vs) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Rbias 0.1 F (SIZE A) 390 1000pF 180 33 nH Z=50, 12.9 Rbias (Ohms) Power Rating 68pF 33 nH 100 pF SXH-189 100pF Rbias 390 Ohms 180 Ohms 0.1uF 1000pF 100pF RFin RFout 100 pF 33nH 33nH 5.6 pF 100pF 5.6pF SXH-189 850 MHz Schematic STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 850 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) 0.1 F (SIZE A) Vs = 5V Frequency 850 M H z 20.0 -22.8 37.7* 23.0 68 pF Rbias=4.3 Small Signal Gain (dB) Input Return Loss (dB) 220 2 6 Output IP3 (dBm) P1dB (dBm) (Rohm) UMZ1N 1 5 1000 pF 4 Vdev 33 nH *Note: IP3 performance degraded due to lower (4.5V) device voltage. 1.8 K9 7509 3 100 pF Z=50, 12.9 UMZ1N 0.1 uF 220 1000pF 68pF GND VCC 4.3 SXH-189 1.8K 33nH 1 100 pF 5.6 pF RF IN RF OUT 850 MHz Schematic 100pF 5.6pF 750 100pF NOTE: Reference Application Note AN-023 for more information on Active Current Feedback Bias Circuit. ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-100xxx- SOT-89 850 MHz Active Bias Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101247 Rev D 4 1960 MHz Application Circuit Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Supply Voltage(Vs) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Vs Rbias 0.1 F (SIZE A) 390 22pF Rbias (Ohms) Power Rating Rbias 1000pF 180 22nH 22nH 68pF Z=50, 45.5 68pF 390 Ohms 180 Ohms RFin 0.1uF 1000pF 22pF RFout 22nH 22nH 68pF 68 pF SXH-189 1.8 pF SXH-189 1.8pF 1960 MHz Schematic STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 1960 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) 0.1 F (SIZE A) Vs = 5V Frequency Small Signal Gain (dB) Input Return Loss (dB) 1960 M H z 14.9 -12.1 38.0* 23.3 22 pF 220 2 6 1 (Rohm) UMZ1N 1000 pF 4 5 3 Rbias=4.3 Vdev 22nH Output IP3 (dBm) P1dB(dBm) *Note: IP3 performance degraded due to lower (4.5V) device voltage. GND 1.8 K9 7509 68 pF 68pF Z=50, 45.5 UMZ1N 0.1 uF 220 1000pF 22pF VCC 4.3 SXH-189 1.8K 1.2 pF RF IN 1 22nH RF OUT 68pF 750 1.2pF 68pF 1960 MHz Schematic NOTE: Reference Application Note AN-023 for more information on Active Current Feedback Bias Circuit. ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-100xxx- SOT-89 1960 MHz Active Bias Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101247 Rev D 5 Absolute Maximum Ratings Parameter Device Voltage Device Current Power Dissipation RF Input Power Junction Temperature Operating Temperature Storage Temperature Preliminary Preliminary SXH-189 5-2000 MHz Power Amplifier Part Number Ordering Information Part Number Devices Per Reel Reel Siz e SXH-189 1000 7" Absolute Maximum 6V 200mA 1500mW 100mW +150C -40C to +85C -65C to +150C Part Symbolization The part will be symbolized with a "XA2" designator on the top surface of the package. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Package Dimensions Pin Description Pin # Function 1 2 B a se GND & Emitter Collector GND & Emitter Base pin. Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector pin. Same as Pin 2 Description 4 XA2 1 2 3 3 4 PCB Pad Layout Recommended via and mounting hole pattern (For RF Ground and Thermal considerations) DIMENSIONS ARE IN INCHES [MM] Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-101247 Rev D 6 |
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